Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Authors

Aris Doyan , Susilawati Susilawati , Lalu Muliyadi

DOI:

10.29303/jppipa.v8i6.2657

Published:

2022-12-28

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Issue:

Vol. 8 No. 6 (2022): December

Keywords:

Enegy band gap, Tin oxide, Semiconductor, Electronic devices

Articles "Regular Issue"

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How to Cite

Doyan, A. ., Susilawati, S., & Muliyadi, L. (2022). Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices. Jurnal Penelitian Pendidikan IPA, 8(6), 2772–2777. https://doi.org/10.29303/jppipa.v8i6.2657

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