Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

Authors

Aris Doyan , Susilawati Susilawati , Kehkashan Alam , Lalu Muliyadi , Firdaus Ali , Mohd Mustafa Awang Kechik

DOI:

10.29303/jppipa.v7iSpecialIssue.1270

Published:

2021-12-29

Issue:

Vol. 7 No. SpecialIssue (2021): December

Keywords:

Thin film, SnO2, aluminum, fluorine, indium, band gap energy

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Doyan, A., Susilawati, S., Alam, K. ., Muliyadi, L. ., Ali, F. ., & Kechik, M. M. A. . (2021). Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications. Jurnal Penelitian Pendidikan IPA, 7(SpecialIssue), 377–381. https://doi.org/10.29303/jppipa.v7iSpecialIssue.1270
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Abstract

Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values ​​of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values ​​of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used

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Author Biographies

Aris Doyan, University of Mataram

mataram university

Susilawati Susilawati, University of Mataram

Kehkashan Alam, University of Mataram

Lalu Muliyadi, University of Mataram

Firdaus Ali, University of Mataram

Mohd Mustafa Awang Kechik, University of Mataram

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Copyright (c) 2021 Aris Doyan, Susilawati Susilawati, Kehkashan Alam, Lalu Muliyadi, Firdaus Ali, Mohd Mustafa Awang Kechik

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