Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

Authors

Aris Doyan , Susilawati Susilawati , Kehkashan Alam , Lalu Muliyadi , Firdaus Ali , Mohd Mustafa Awang Kechik

DOI:

10.29303/jppipa.v7iSpecialIssue.1270

Published:

2021-12-29

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Issue:

Vol. 7 No. SpecialIssue (2021): December

Keywords:

Thin film, SnO2, aluminum, fluorine, indium, band gap energy

Articles "Special Issue"

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How to Cite

Doyan, A., Susilawati, S., Alam, K. ., Muliyadi, L. ., Ali, F. ., & Kechik, M. M. A. . (2021). Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications. Jurnal Penelitian Pendidikan IPA, 7(SpecialIssue), 377–381. https://doi.org/10.29303/jppipa.v7iSpecialIssue.1270

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